| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
VJ448M | Bridge Rectifiers | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
VJ448M | Bridge Rectifiers | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
VJ448M | 包装：散装 封装/外壳：4-方形，VJ 类别：分立半导体产品 二极管 - 桥式整流器 描述：BRIDGE RECT 1PHASE 400V 10A VJ | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
Linearmotion0.2wattcompositionslidecontrol | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
SurfaceMountFuses | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.60ohm,Id=11A) DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS | IRF International Rectifier | IRF | ||
N-Channel100-V(D-S)MOSFET KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •LEDInverterCircuits •DC/DCConversionCircuits •Motordrives | AnalogPower Analog Power | AnalogPower | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD448isPb-free(meetsROHS&Sony259specifications).AO | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD448isPb-free(meetsROHS&Sony259specifications).AO | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU448isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU448isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TO-8CASCADABLEAMPLIFIER | TELEDYNE Teledyne Technologies Incorporated | TELEDYNE | ||
N-CHANNELENHANCEMENTMODE TheARF448AandARF448BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto65MHz. Specified150Volt,40.68MHzCharacteristics: OutputPower=140Watts. Gain=1 | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODE TheARF448AandARF448BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto65MHz. Specified150Volt,40.68MHzCharacteristics: OutputPower=140Watts. Gain=1 | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODE | ADPOW Advanced Power Technology | ADPOW |
产品属性
- 产品编号：
VJ448M
- 制造商：
Microsemi Corporation
- 类别：
分立半导体产品 > 二极管 - 桥式整流器
- 包装：
散装
- 二极管类型：
Single Phase
- 技术：
标准
- 工作温度：
-55°C ~ 175°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
4-方形，VJ
- 供应商器件封装：
VJ
- 描述：
BRIDGE RECT 1PHASE 400V 10A VJ
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microsemi Corporation |
22+ |
VJ |
9000 |
原厂渠道,现货配单 |
询价 | ||
Microsemi Corporation |
24+ |
4-方形 VJ |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ASAT |
23+ |
QFN10 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Microsemi |
24+ |
17 |
询价 |
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