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NVHL080N120SC1A

MOSFET - SiC Power, Single N-Channel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTBG080N120SC1

SiCN-ChannelMOSFET

FEATURES ·LowEffectiveOutputCapacitance ·UltraLowGateCharge APPLICATIONS ·MainInverters ·GeneralPurposeInverters ·DC/DCConverter ·UPS

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTBG080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typic

ONSEMION Semiconductor

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NTBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typic

ONSEMION Semiconductor

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NTBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,80m,30A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTC080N120SC1

MOSFET??N?륝hannel,SiliconCarbide1200V,80m

ONSEMION Semiconductor

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NTHL080N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

ONSEMION Semiconductor

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NTHL080N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL080N120SC1A

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTHL080N120SC1A

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U

ONSEMION Semiconductor

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NTHL080N120SC1D

MOSFET-SiCPower,SingleN-Channel1200V,80m,31A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVBG080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVBG080N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVC080N120SC1

MOSFET??N?륝hannel,SiliconCarbide1200V,80m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVHL080N120SC1

SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVHL080N120SC1

MOSFET-SiCPower,SingleN-Channel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
onsemi
24+
TO-247-3
30000
晶体管-分立半导体产品-原装正品
询价
ON
22+
TO-247
9000
只做原装 假一赔十
询价
ON
23+
TO-247-3LD
100000
全新原装
询价
ON/安森美
23+
TO-247
2880
只做原厂原装现货库存
询价
ON
22+
TO-247
13000
原装现货实单必成 只做原装!
询价
onsemi(安森美)
23+
TO-247
7814
支持大陆交货,美金交易。原装现货库存。
询价
ON(安森美)
23+
TO-247
10734
公司只做原装正品,假一赔十
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ON2
23+
原厂原封
450
订货1周 原装正品
询价
onsemi
23+
TO-247-3LD
1356
原厂正品现货SiC MOSFET全系列
询价
更多NVHL080N120SC1A供应商 更新时间2024-11-21 15:25:00