BCC0913

Single-EndedCordsets

Basicfeatures ApplicationOperatingvoltage Approval/Conformity CE cULus EAC WEEE

C0913A

ComputerCable

MGF0913A

L&SBANDGaAsFET[SMDnon-matched]

DESCRIPTION TheMGF0913AGaAsFETwithanN-channelschottkyGate,isdesignedforuseUHFbandamplifiers. FEATURES Highoutputpower Po=31dBm(TYP.)@f=1.9GHz,Pin=18dBm Highpowergain Gp=13dB(TYP.)@f=1.9GHz Highpoweraddedefficiency nadd=48(TYP.

MGF0913A

High-powerGaAsFET(smallsignalgainstage)

MRFIC0913

900MHzGSMCELLULARINTEGRATEDPOWERAMPLIFIERGaAsMONOLITHICINTEGRATEDCIRCUIT

TheMRFICLine900MHzGaAsIntegratedPowerAmplifier ThisintegratedcircuitisintendedforGSMclassIVhandsets.Thedeviceisspecifiedfor2.8wattsoutputpowerand48minimumpoweraddedefficiencyunderGSMsignalconditionsat4.8Voltsupplyvoltage.Toachievethissuperiorperform

RLB0913

RadialLeadInductor

RSZ-0913

1WattSMDMiniatureIsolatedSingleOutput

RSZ-0913HP

1WattSMDMiniatureIsolatedSingleOutput

TA0913A

SAWFilter2350MHz

TA0913B

SAWFilter2350MHz

TZ0913A

CrystalUnitSMD3.2x2.525.000MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

XB0913A

ALLDIMENSIONSINMM[INCH]

XF0913P

ALLDIMENSIONSINMM[INCH].