首页 >G02N120>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:    -Motorcontrols    -Inverter    -SMPS •NPT-Technologyoffers:    -verytightparameterdistributi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXTP02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTP02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTY02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTY02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SGB02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGB02N120

FastIGBTinNPT-technologyLowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N120

FastIGBTinNPT-technology

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.6V@IC=2A ·HighCurrentCapability ·HighInputImpedance ·Lowthermalresistance APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SGI02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGI02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGP02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGP02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGP02N120

IGBT

DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·Motorcontrols ·Inverter ·SMPS

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SGW02N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGW02N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. •lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforfrequencyinvertersforwashingmachi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:    -Motorcontrols    -Inverter    -SMPS •NPT-Technologyoffers:    -verytightparameterdistributi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode Allowednumberofshortcircuits:1s. •lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10s •Designedforfrequencyinvertersfor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
infineon
23+
SOT-252
16000
专业优势供应
询价
UTG
21+ROHS
SOT-252
17999998
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INFINEON
23+
SOT-252
8000
只做原装现货
询价
INFINEON
2018+
TO251
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
VB
2019
DPAK
55000
绝对原装正品假一罚十!
询价
IR
23+
SOT-252
12300
全新原装真实库存含13点增值税票!
询价
I
23+
SOT-252
10000
公司只做原装正品
询价
I
SOT-252
22+
6000
十年配单,只做原装
询价
I
22+
SOT-252
25000
只做原装进口现货,专注配单
询价
VBSEMI
19+
DPAK
29600
绝对原装现货,价格优势!
询价
更多G02N120供应商 更新时间2024-6-8 14:02:00